SPICE compact model of controlling electrons of spin qubits using FinFET

Author:

Pérez-Rodríguez Elias A.,Orvañanos-Guerrero María T.,Tanamoto Tetsufumi

Abstract

Abstract Semiconductor qubits have garnered attention in the field of device physics. Owing to the limited coherence of electrons and holes, smaller and more compact qubits are desirable. This requirement is aligned with the miniaturization of conventional transistors. In this study, we consider a compact spin qubit based on the FinFET (Fin Field-Effect Transistor) by using the SPICE (Simulation Program with Integrated Circuit Emphasis) simulator. The qubits are represented by the quantum dots (QDs) between the Fin structure. In order to setup the qubit, we have to control the number of electrons through the FinFET. Here, we consider the circuit model of our system by treating the transport properties of the QD and the FinFET as single-electron phenomena. We provide the SPICE simulation results and show the single-electron current as the functions of the FinFET parameters such as the channel length and width including the operation temperature.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Noise properties in the Coulomb blockade region of FinFETs;Japanese Journal of Applied Physics;2024-03-01

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