Abstract
Abstract
The fundamental defects around the p–n interface were analyzed based on low temperature photoluminescence measurements to determine the origin of the various defects around the n-CdS/p-SnS structure in tin sulfide (SnS) solar cells. Particularly, the effects of Cd, S, and Na atoms on PL at the interface of a CdS layer and various treated SnS layers were examined. The PL peaks at 1.08 and 1.23 eV in the CdS/SnS structure, which were observed using the Cd partial electrolyte-treated SnS film, were associated with the formation of Cd-related defects. Furthermore, the PL peak at 1.27 eV in the CdS/SnS structure, which was observed using the sulfurized-SnS film and the excess Na-diffused SnS film, was associated with the formation of S-related defects such as OS defects. These findings present considerable potential for improving the efficiency of SnS solar cells.
Funder
Murata Science Foundation
Yamaguchi Educational and Scholarship Foundation
Uchida Energy Science Promotion Foundation
NAGAI N·S Promotion Foundation for Science of Perception
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering