Author:
Shen Meihua,Lill Thorsten,Hoang John,Chi Hao,Routzahn Aaron,Church Jonathan,Subramonium Pramod,Puthenkovilakam Ragesh,Reddy Sirish,Bhadauriya Sonal,Roberts Sloan,Kamarthy Gowri
Abstract
Abstract
High aspect ratio (HAR) silicon nitride and silicon oxide (ONON) channel hole patterning in 3D NAND flash presents great challenges. This report summarizes some of the recent progress in patterning from the perspective of HAR etching and deposition-etch co-optimization (DECO). HAR etching mechanisms will be discussed, with a focus on how to reduce the aspect ratio-dependent etching (ARDE) effect. Highlights of the new low-temperature etch process will be presented, with significant improvement in the ARDE being observed. New simulation results from a Monte Carlo feature-scale model provide insights into ion scattering and mask interactions on the control of the channel hole profile. DECO is a new frontier to enable better control of the channel hole shape at HAR. Film tier optimization and carbon liner insertion results show improvement in channel hole profile control.
Subject
General Physics and Astronomy,General Engineering
Reference27 articles.
1. Bit cost scalable technology with punch and plug process for ultra high density flash memory;Tanaka
2. A world's first product of three-dimensional vertical NAND Flash memory and beyond;Park
3. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: how can we control critical dimension uniformity at the bottom?;Ishikawa;Jpn. J. Appl. Phys.,2018
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献