Exploring thermally stable metal-oxide/SiO2 stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response

Abstract

Abstract We fabricated Al2O3/SiO2 stack structures with atomically thin Ti oxide layers at the interfaces using atomic layer deposition and investigated the capacitance–voltage (C–V) hysteresis of the metal-oxide-semiconductor (MOS) capacitors. We studied the effect of post-deposition annealing in the temperature range of 150 °C−500 °C on the C–V hysteresis and found that the Al2O3/SiO2-based stacks are thermally stable compared to ZrO2/SiO2- and HfO2/SiO2-based stacks. Using Al2O3/SiO2-based stacks, we investigated the impact of oxide layer thickness and gate electrode materials and studied pulse-induced current changes in MOS field-effect transistors.