Abstract
Abstract
Vertical AlGaN-based UV-B laser diodes were fabricated by a laser lift-off method to exfoliate sapphire substrates. These devices were processed on 1 cm2 square wafers with a polycrystalline sintered AlN substrate as a structural support for the exfoliated device. Following electrode formation and other necessary processing steps, mirrors were formed through cleavage. Subsequently, the performance of the device was evaluated by injecting a pulsed current at room temperature. Results revealed distinct characteristics, including a sharp emission at 298.1 nm, a well-defined threshold current, strong transverse-electric polarization characteristic, and a laser-specific spot-like far-field pattern, confirming the oscillation of the vertical laser diode.
Funder
New Energy and Industrial Technology Development Organization
Japan Science and Technology Agency
MOE program
Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,General Engineering