Author:
Ito Maiko,Hamaguchi Tatsushi,Makino Tomohiro,Hayashi Kentaro,Kearns Jared A.,Ohara Maho,Kobayashi Noriko,Nagane Shoetsu,Sato Koichi,Nakamura Yuki,Hoshina Yukio,Jyoukawa Tatsurou,Watanabe Takumi,Kikuchi Yuichiro,Kasahara Seiji,Kusanagi Susumu,Kanitani Yuya,Kudo Yoshihiro,Nakayama Eiji,Koda Rintaro,Futagawa Noriyuki
Abstract
Abstract
This study obtained highly uniform and efficient GaN-based vertical-cavity surface-emitting lasers with curved mirrors from a single wafer. The average threshold current (I
th) and the optical output power (P
max) of 14 chips measured up to 7.0 mA were 0.64 mA and 4.5 mW, respectively. The standard deviations of I
th and P
max were 6.7% and 5.1%, respectively. Additionally, the best chip showed maximum values of wall plug efficiency and output power of 13.4% and 7.6 mW, respectively, at 5.2 mA and 12.8 mA operating currents.
Subject
General Physics and Astronomy,General Engineering
Cited by
7 articles.
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