Effect of the Photoquenching ofEL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices-Reference-Cited by-同舟云学术

Effect of the Photoquenching ofEL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices

Published:2008-01-18 Issue:1 Volume:47 Page:319-324
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Ping,Fukuyama Atsuhiko,Akashi Yoshito,Ikari Tetsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice

2. Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices

3. In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures

4. Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence

5. Linear polarization effects on photoluminescence properties of GaAs/AlAs quantum well heterostructures

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