Organic Contaminant Detection of Silicon Wafers Using Negative Secondary Ions Induced by Cluster Ion Impacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=4/a=047002/pdf
Reference17 articles.
1. Hydrocarbon reaction with HF‐cleaned Si(100) and effects on metal‐oxide‐semiconductor device quality
2. Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide degradation due to organic contamination
3. Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides
4. Analysis of surface contaminants on gallium arsenide and silicon by high-resolution time-of-flight secondary ion mass spectrometry
5. Nonlinear effects in heavy‐ion sputtering
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1. Time-of-flight secondary ion mass spectrometry with energetic cluster ion impact ionization for highly sensitive chemical structure characterization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11
2. Surface-sensitive Chemical Analysis of Organic Insulating Thin Films Using Negative Secondary Ions Induced by Medium Energy C$_{60}$ Impacts;Applied Physics Express;2011-11-10
3. Secondary ion counting for surface-sensitive chemical analysis of organic compounds using time-of-flight secondary ion mass spectroscopy with cluster ion impact ionization;Review of Scientific Instruments;2011-03
4. Transmission of cluster ions through a tandem accelerator of several stripper gases;Review of Scientific Instruments;2009-10
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