Off-State Breakdown Modeling for High-Schottky-Barrier δ-Doped In0.49Ga0.51P/In0.25Ga0.75As/InP High Electron Mobility Transistor
-
Published:2003-07-15
Issue:Part 1, No. 7A
Volume:42
Page:4253-4256
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Lee Ching-Sung,Hsu Wei-Chou
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering