Determination of Internal Loss in Nitride Lasers from First Principles
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=8/a=082101/pdf
Reference18 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures
3. 500 nm electrically driven InGaN based laser diodes
4. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
5. AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
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