High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes-Reference-Cited by-同舟云学术

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High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

Published:2010-07-16 Issue:8 Volume:3 Page:082001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Lin You-Da,Yamamoto Shuichiro,Huang Chia-Yen,Hsiung Chia-Lin,Wu Feng,Fujito Kenji,Ohta Hiroaki,Speck James S.,DenBaars Steven P.,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=8/a=082001/pdf

Reference20 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

3. Nonpolar and Semipolar Group III Nitride-Based Materials

4. Nonpolar/Semipolar GaN Technology for Violet, Blue, and Green Laser Diodes

5. Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

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4. p-type AlN based heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky character achieving significant breakdown performance;Journal of Applied Physics;2021-11-21

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