Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3Gate Thin Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate;Materials;2021-06-16
2. Comparative studies of metal‐organic decomposed Ga x Ce y O z and CeO 2 based functional MOS capacitor;International Journal of Energy Research;2021-06-07
3. Photoactivated high-k lanthanum oxide-aluminum oxide (La2O3–Al2O3) alloy-type gate dielectrics for low-voltage-operating flexible transistors;Journal of Alloys and Compounds;2020-11
4. Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor;Japanese Journal of Applied Physics;2020-05-12
5. Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks;Materials Science in Semiconductor Processing;2017-11
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