Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film-Reference-Cited by-同舟云学术

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Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film

Published:2000-11-15 Issue:Part 2, No. 11B Volume:39 Page:L1138-L1140
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lai Wei-Chih,Yokoyama Meiso,Chang Shoou-Jinn,Guo Jan-Dar,Sheu Chia-hon,Chen Tsung-yu,Tsai Wen-Chung,Tsang Jian-Shihn,Chan Shih-Hsiung,Sze Simon M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of 532 nm laser-assisted annealing on metal contact to p-GaN;Materials Science in Semiconductor Processing;2022-03

2. Improved contact characteristics of laser-annealed p-GaN coated with Ni films;Journal of Applied Physics;2015-08-28

3. Laser Ablation;Comprehensive Materials Processing;2014

4. Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation;Japanese Journal of Applied Physics;2011-04-20

5. Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation;Japanese Journal of Applied Physics;2011-04-01

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