Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
-
Published:2001-04-15
Issue:Part 1, No. 4A
Volume:40
Page:2132-2137
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Nakamura Kazuhiro,Itoh Mitsunari,Yoshimoto Masahiro,Saraie Junji,Matsunami Hiroyuki
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering