High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate-Reference-Cited by-同舟云学术

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High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

Published:2010-12-03 Issue:12 Volume:3 Page:121003
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Tokuda Hirokuni,Hatano Maiko,Yafune Norimasa,Hashimoto Shin,Akita Katsushi,Yamamoto Yoshiyuki,Kuzuhara Masaaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=12/a=121003/pdf

Reference10 articles.

1. 30-W/mm GaN HEMTs by Field Plate Optimization

2. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

3. The Improvement of DC Performance in AlGaN–GaN HEFTs With Isoelectronic Al-Doped Channels

4. Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

5. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

Cited by 110 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility;Advanced Electronic Materials;2024-06-18

2. 1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate;IEEE Electron Device Letters;2024-06

3. Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts;Advanced Materials Interfaces;2024-03-29

4. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

5. Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-09

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