Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide-Reference-Cited by-同舟云学术

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Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide

Published:2007-07-04 Issue:7A Volume:46 Page:4021-4027
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ueno Hitoshi,Sugawara Yuta,Yano Hiroshi,Hatayama Tomoaki,Uraoka Yukiharu,Fuyuki Takashi,Serikawa Tadashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Sputter-Deposited Thin Gate SiO2Films for High Quality Polycrystalline Silicon Thin Film Transistors

2. Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

3. Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy

4. Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly-Si TFT Using Polydiacetylene-Based Thermoresponsive Fluorometry;IEEE Transactions on Electron Devices;2011-05

2. Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness;IEICE Transactions on Electronics;2010

3. Trapping characteristics of Al2O3/HfO2/SiO2 stack structure prepared by low temperature in situ oxidation in dc sputtering;Journal of Applied Physics;2009-05

4. Characterizing Fluorine-Ion Implant Effects on Poly-Si Thin-Film Transistors With ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ Gate Dielectric;Journal of Display Technology;2008-06

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