Measurement of Stress near Dislocation Walls in a ZnSe Signal Crystal by Raman Scattering Tomography

Abstract

Intensity and wavenumber of the transverse optical (TO) and longitudial optical (LO) modes of Raman peaks were respectively measured as a function of distance from a dislocation wall in a ZnSe single crystal grown by vapor phase method. The peak intensity of the LO mode was increased but that of the TO mode was decreased with distance from the wall, while wavenumber of the LO mode peak was clearly decreased with distance. According to the scattered light intensity against polarization configuration, it is concluded that there is no twinning across the wall. Wavenumber of the LO mode peak was qualitatively measured as a function of distance from the wall center, and a compressive stress in the matrix was introduced along the wall. This stress was numerically estimated as 1×108 N/m2 in the dislocation wall.