Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy

Published:2006-10-13 Issue:No. 41 Volume:45 Page:L1090-L1092
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fehlberg Tamara B.,Umana-Membreno Gilberto A.,Nener Brett D.,Parish Giacinta,Gallinat Chad S.,Koblmüller Gregor,Rajan Siddharth,Bernardis Sarah,Speck James S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN;Journal of Materials Science;2023-05

2. Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation;Surface and Coatings Technology;2023-02

3. First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel;Semiconductor Science and Technology;2020-06-09

4. Influence of proton irradiation on carrier mobility in InN epitaxial layers;Thin Solid Films;2019-12

5. Features of the Formation of Ohmic Contacts to n+-InN;Ukrainian Journal of Physics;2019-01-30

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