Fluorine Implantation of Atomic Layer Epitaxy Grown In2 O 3 Films-Reference-Cited by-同舟云学术

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Fluorine Implantation of Atomic Layer Epitaxy Grown In2 O 3 Films

Published:1997-06-01 Issue:6 Volume:144 Page:L140-L141
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Asikainen Timo¹,Ritala Mikko¹,Li Wei‐Min¹,Lappalainen Reijo²,Leskelä Markku¹

Affiliation:

1. Department of Chemistry, FIN‐00014 University of Helsinki, Finland

2. Accelerator Laboratory, FIN‐00014 University of Helsinki, Finland

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837703/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The structural, thermoelectric and photoconductive properties of sulfur doped In2O3thin films prepared by spray pyrolysis;Physica Scripta;2012-10-09

2. ChemInform Abstract: Fluorine Implantation of Atomic Layer Epitaxy Grown In2O3 Films.;ChemInform;2010-08-03

3. Carbon-doped In2O3 films for photoelectrochemical hydrogen production;International Journal of Hydrogen Energy;2008-11

4. Atomic layer deposition growth of zirconium doped In2O3 films;Thin Solid Films;2003-09

5. Low pressure chemical vapor deposition of fluorine-doped indium oxide films from an indium alkoxide complex;Journal of Materials Chemistry;2000

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