(Invited) High Electron Mobility n-Channel Ge MOSFETs with Sub-Nm EOT

Abstract

We demonstrate that Ge FETs show significantly high mobility of not only hole but also electron. In particular, this paper discusses what challenging issues are in n-channel FETs to achieve high electron mobility both in high electron density and in very thin EOT regions, by carefully considering electron scattering mechanisms in Ge MOS inversion channel. The results show us a promising future of Ge devices beyond Si FET technology.