60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers
Author:
Funder
DOD | Defense Threat Reduction Agency
National Research Foundation of Korea
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference52 articles.
1. Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons
2. Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions
3. Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode
4. Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs
5. Radiation hardness of gallium nitride
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