Graded Cladding Layers in Infrared III-Arsenide Separate Confinement Heterostructure Laser Diodes

Abstract

Graded aluminum composition in AlGaAs n-cladding and p-cladding layers have been shown to exhibit improved optoelectronic performance in the single quantum well separate confinement heterostructure laser diode (SQW SCH LD) in the infrared region. The output power of the laser diode is increased up to 45 mW by using graded aluminum composition in n-/p- cladding layers. In addition, the lasing threshold current density is also lowered which results in a significant optical gain. The stimulated emission rate also improves due to improved electron-hole recombination and, thus, resulting in improved lasing.