Abstract
Previous work of this research group produced high quality and stable silicon dioxide
(
SiO
2
)
films on gallium arsenide (GaAs) substrates by liquid phase deposition (LPD) at room temperature. This study presents a method to improve these
SiO
2
layers via a
N
2
O
process utilizing fluorine, which controls the physical and chemical properties of the oxides. A maximum growth rate of 1303 Å/h and a refractive index of 1.44 were obtained. Previous LPD deposition had better charge density than did conventional vacuum deposition. The method proposed herein produces a practical and reliable
SiO
2
film with a charge density of
∼
8.6
×
10
10
cm
−
2
,
improved over previous LPD
SiO
2
,
allowing increased ultralarge-scale integration potential. © 2001 The Electrochemical Society. All rights reserved.
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Cited by
6 articles.
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