Author:
Sioncke Sonja,Delabie Annelies,Brammertz Guy,Conard Thierry,Franquet Alexis,Caymax Matty,Urbanzcyk Adam,Heyns Marc,Meuris Marc,van Hemmen J. L.,Keuning W.,Kessels W. M. M.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference31 articles.
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2. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
3. Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers
4. Nucleation and Growth Behavior of Atomic Layer Deposited HfO[sub 2] Films on Silicon Oxide Starting Surfaces
5. Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model
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