Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐  B 2 H 6 ‐ He Gas System

Author:

Nakayama Satoshi1,Kawashima Izumi1,Murota Junichi1

Affiliation:

1. Nippon Telegraph and Telephone Corporation, Atsugi Electrical Communication Laboratories, Atsugi, Kanagawa, 243‐01 Japan

Publisher

The Electrochemical Society

Cited by 64 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si1−xGex Epitaxial Growth;ECS Journal of Solid State Science and Technology;2021-02-01

2. Langmuir-Type Mechanism for In-Situ Boron Doping in CVD Si<inf>1-x</inf>Ge<inf>x</inf> Epitaxial Growth;2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT);2018-10

3. Effect of boron doping on optical and electrical properties of p-type a-Si&#x2236;H films for thin film solar cells application;2014 1st International Conference on Non Conventional Energy (ICONCE 2014);2014-01

4. Simulation of Boron-doped Silicon Film Thickness within Holes on the Wafer;Journal of the Vacuum Society of Japan;2012

5. Transport Modulation in Ge/Si Core/Shell Nanowires through Controlled Synthesis of Doped Si Shells;Nano Letters;2011-03-21

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