Abstract
In this study, we used thin flexible glass of 75 um in average thickness as a substrate to fabricate poly-Si TFT's. Glass substrates are so thin that they can be bent to radius of curvature as small as 3 inch. Glass substrate, we used, is borosilicate glass, thus barrier layers, SiNx fooled by a SiO2 layer, were deposited on both sides of glass substrate to suppress the out-migration of unwanted glass constituents from the glass into the semiconductor during processing. We fabricated Poly Si TFT on this substrate and investigated characteristics of the TFT.
Publisher
The Electrochemical Society
Cited by
2 articles.
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