3C-SiC Film Growth on Si Substrates-Reference-Cited by-同舟云学术

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3C-SiC Film Growth on Si Substrates

Published:2019-12-16 Issue:6 Volume:35 Page:99-116
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Severino Andrea,Locke Christopher,Anzalone Ruggero,Camarda Massimo,Piluso Nicolò,La Magna Antonino,Saddow Stephen,Abbondanza Giuseppe,D'Arrigo Giuseppe,La Via Francesco

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.3570851/pdf

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elastic Energy Relaxation During the Chemical Reaction with Single-Crystalline Silicon in the Process of Coordinated Substitution of Atoms;Журнал неорганической химии;2024-09-05

2. Elastic Energy Relaxation in the Chemical Reaction of CO with Single-Crystalline Silicon during Coordinated Substitution of Atoms;Russian Journal of Inorganic Chemistry;2024-07-17

3. Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate;Nanotechnology;2024-04-09

4. Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature;Materials Today Communications;2024-03

5. Study of the Chemical Vapor Deposition of Nano-Sized Carbon Phases on {001} Silicon;Materials;2023-11-16

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