Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists
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SPIE
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition;Thin Solid Films;2018-08
2. EUV lithography process challenges;Materials and Processes for Next Generation Lithography;2016
3. Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method;Transactions of the Materials Research Society of Japan;2015
4. Balancing lithographic performance and resist outgassing in EUV resists;Extreme Ultraviolet (EUV) Lithography IV;2013-04-01
5. Using Directed Self Assembly of Block Copolymer Nanostructures to Modulate Nanoscale Surface Roughness: Towards a Novel Lithographic Process;Advanced Functional Materials;2012-08-22
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