High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture-Reference-Cited by-同舟云学术

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High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture

Published:2021-03-05 Issue: Volume: Page:
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Container-title:Vertical-Cavity Surface-Emitting Lasers XXV
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Author:

Johnson Andrew,Joel Andrew,Clark Andrew,Pearce Dan,Geen Matthew,Wang Wang,Pelzel Rodney,Lim Sung Wook

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithically Integrated 940 nm VCSELs on Bulk Ge Substrates;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15

2. Advancements in MOCVD technology for low cost high quality epitaxy;Light-Emitting Devices, Materials, and Applications XXVIII;2024-03-13

3. Monolithically integrated 940 nm VCSELs on bulk Ge substrates;Optics Express;2024-02-08

4. High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon;IEEE Journal of Quantum Electronics;2023-04

5. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs;Journal of Physics D: Applied Physics;2023-03-13

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