Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications-Reference-Cited by-同舟云学术

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Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications

Published:2024-04-10 Issue: Volume:27 Page:48
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Container-title:Metrology, Inspection, and Process Control XXXVIII
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Author:

Beggiato Matteo,Cerbu Dorin,Loo Roger,Sun Wei,Moussa Alain,Bast Gerhard,Fukaya Kaoru,Beral Christophe,Charley Anne-Laure,Janardan Nachiketa,Cross Andrew,Lorusso Gian F.,Isawa Miki,Belmonte Attilio,Kar Gouri Sankar,Bogdanowicz Janusz

Publisher

SPIE

Reference17 articles.

1. Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning;Mertens,2023

2. Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

3. Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -;Han,2023

4. Design-technology co-optimization overview of CFET architecture

5. Chapter 3 - Mechanism of Strain Relaxation;Jain,2003

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trends in e-beam metrology and inspection;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

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