Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4
Author:
Affiliation:
1. Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, South Korea
2. Leibniz-Institut für Kristallzüchtung, Berlin 12489, Germany
Funder
Samsung Science and Technology Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0007716
Reference27 articles.
1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
2. Experimental electronic structure of In2O3and Ga2O3
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4. Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
5. Epitaxial Growth of ZnGa2O4: A New, Deep Ultraviolet Semiconductor Candidate
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