Synthesis of monocrystal aluminum nitride nanowires at low temperature

Abstract

Hexagonal monocrystal aluminum nitride (h-AlN) nanowires are synthesized through the direct reaction of AlCl3 with NaN3 in a nonsolvent system at low temperatures. The h-AlN nanowires are characterized by the high-resolution transmission electron microscope, electron diffraction, x-ray diffraction, and photoluminescence spectra. The analysis shows that the nanowire has a long straight-wire morphology with a diameter ranging from 40to60nm, the longest one up to several micrometers, and they are of pure monocrystal hexagonal or face center structure which has a relatively narrow emission peak, centered at 413nm (3.00eV). In addition, a possible growth mechanism for h-AlN nanowire is discussed.