Demonstration of device-quality 60% relaxed In<sub>0.2</sub>Ga<sub>0.8</sub>N on porous GaN pseudo-substrates grown by PAMBE-Reference-Cited by-同舟云学术

Demonstration of device-quality 60% relaxed In_0.2Ga_0.8N on porous GaN pseudo-substrates grown by PAMBE

Published:2022-01-07 Issue:1 Volume:131 Page:015701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wurm Christian¹^ORCID,Collins Henry¹^ORCID,Hatui Nirupam¹^ORCID,Li Weiyi¹,Pasayat Shubhra²,Hamwey Robert¹,Sun Kai³^ORCID,Sayed Islam¹^ORCID,Khan Kamruzzaman³^ORCID,Ahmadi Elaheh⁴^ORCID,Keller Stacia¹,Mishra Umesh¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

2. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

4. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0075948

Reference70 articles.

1. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. White light from InGaN/conjugated polymer hybrid light-emitting diodes

4. White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

5. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

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