Temperature and carrier density dependence of electron effective mass and bandgap in semiconductor carbon nanotubes at elevated temperature: Analytical calculations-Reference-Cited by-同舟云学术

Temperature and carrier density dependence of electron effective mass and bandgap in semiconductor carbon nanotubes at elevated temperature: Analytical calculations

Published:2018-09-28 Issue:12 Volume:124 Page:124902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Van Tan Le¹²,Vy Nguyen Duy³⁴^ORCID,Cao Huy Thien¹

Affiliation:

1. Ho Chi Minh City Institute of Physics, Vietnam Academy of Science and Technology, Mac Dinh Chi 1, Ho Chi Minh City 710116, Vietnam

2. Faculty of Physics and Engineering Physics, University of Science, Vietnam National University, Ho Chi Minh City 748355, Vietnam

3. Theoretical Physics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City 756636, Vietnam

4. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City 756636, Vietnam

Funder

National Foundation for Science and Technology Development

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034404

Reference42 articles.

1. Shape-engineerable and highly densely packed single-walled carbon nanotubes and their application as super-capacitor electrodes

2. Carbon nanotube electronics: recent advances

3. Chirality-Controlled Synthesis and Applications of Single-Wall Carbon Nanotubes

4. Engineered Newcastle disease virus expressing the F and G proteins of AMPV-C confers protection against challenges in turkeys

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