InGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
2. Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
Funder
New Energy and Industrial Technology Development Organisation (NEDO)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902319
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