A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2781319
Reference42 articles.
1. Acceptor states in the photoluminescence spectra ofn−InN
2. On the crystalline structure, stoichiometry and band gap of InN thin films
3. In-polar InN grown by plasma-assisted molecular beam epitaxy
4. Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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