Transient capacitance study of defects introduced by electron‐beam deposition of metals onp‐type silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333154
Reference10 articles.
1. Radiation effects of electron‐beam metal depositions on IGFET’s
2. Deep levels introduced during electron‐beam deposition of metals onn‐type silicon
3. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons
4. A transient capacitance study of radiation-induced defects in aluminum-doped silicon
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