Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures-Reference-Cited by-同舟云学术

Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

Published:2011-12-01 Issue:11 Volume:110 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Asgari A.¹²,Babanejad S.¹,Faraone L.²

Affiliation:

1. Research Institute for Applied Physics, University of Tabriz 1 , Tabriz 51665-163, Iran

2. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley 2 , WA 6009, Australia

Abstract

In this paper, we present a study of the effect of temperature on the two-dimensional electron mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in unintentionally doped AlxGa1−xN/AlN/GaN heterostructures. The analysis of our results clearly indicates that the effect of partial sub-band occupancy is considerable, especially at higher operating temperatures when more than one sub-band is occupied. The comparison of our calculated results with published experimental data is shown to be in good agreement.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3665124/13426208/113713_1_online.pdf

Reference56 articles.

1. High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature

2. Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

4. The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes

5. Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layer

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys;Journal of Applied Physics;2024-12-27

2. Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier;Mikroèlektronika;2024-10-27

3. TCAD Modelling of Magnetic Hall Effect Sensors;Inventions;2024-07-10

4. Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

5. Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier;Russian Microelectronics;2024-06