High-quality SiO2 film formation by highly concentrated ozone gas at below 600 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1507829
Reference19 articles.
1. Single-wafer integrated semiconductor device processing
2. Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen
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4. UV assisted growth of 100 Å thick SiO2at 550°C
5. Low-Temperature Oxidation of Silicon in Dry O2Ambient by UV-Irradiation
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