Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112270
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1. New MBE buffer used to eliminate backgating in GaAs MESFETs
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3. Growth of Fe-doped semi-insulating InP by MOCVD
4. Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen
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