Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates-Reference-Cited by-同舟云学术

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Published:2018-06-25 Issue:26 Volume:112 Page:262103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cao Lina¹^ORCID,Wang Jingshan¹,Harden Galen¹,Ye Hansheng¹,Stillwell Roy¹,Hoffman Anthony J.¹,Fay Patrick¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5031785

Reference28 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. GaN-on-Si Vertical Schottky and p-n Diodes

3. Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

4. J. Wang , L. Cao , J. Xie , E. Beam , R. McCarthy , C. Youtsey , and P. Fay , in 2017 IEEE International Electron Devices Meeting (IEDM) (IEEE, 2017), pp. 6–9.

5. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Cited by 91 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis of nano-diamond film on GaN surface with low thermal boundary resistance and high thermal conductivity;Carbon;2024-10

2. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN;IEEE Transactions on Electron Devices;2024-09

3. Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates;physica status solidi (a);2024-06-02

4. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance;IEEE Transactions on Electron Devices;2024-06

5. Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices;Micromachines;2024-05-29