Desorption kinetics of GeO from GeO2/Ge structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3475990
Reference44 articles.
1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 789.
2. Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
3. Thermal desorption of Ge native oxides and the loss of Ge from the surface
4. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
5. High-k/Ge MOSFETs for future nanoelectronics
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