All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning-Reference-Cited by-同舟云学术

All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning

Published:2005-01-10 Issue:2 Volume:86 Page:021106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ahn J.,Lu D.,Deppe D. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1849417

Reference5 articles.

1. Native‐oxide defined ring contact for low threshold vertical‐cavity lasers

2. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

3. All-epitaxial mode-confined vertical-cavity surface-emitting laser

4. Index guiding dependent effects in implant and oxide confined vertical-cavity lasers

5. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

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