Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens-Reference-Cited by-同舟云学术

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Published:2013-06-07 Issue:21 Volume:113 Page:213501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Umezu Ikurou,Warrender Jeffrey M.,Charnvanichborikarn Supakit,Kohno Atsushi,Williams James S.,Tabbal Malek,Papazoglou Dimitris G.,Zhang Xi-Cheng,Aziz Michael J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4804935

Reference28 articles.

1. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

2. Near-unity below-band-gap absorption by microstructured silicon

3. Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

4. Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

5. Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

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