In-situ heavily p-type doping of over 1020 cm−3 in semiconducting BaSi2 thin films for solar cells applications-Reference-Cited by-同舟云学术

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In-situ heavily p-type doping of over 1020 cm−3 in semiconducting BaSi2 thin films for solar cells applications

Published:2013-03-18 Issue:11 Volume:102 Page:112107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ajmal Khan M.¹^ORCID,Hara K. O.²,Du W.¹,Baba M.¹,Nakamura K.¹,Suzuno M.¹,Toko K.¹,Usami N.²³,Suemasu T.¹³

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan

3. Japan Science and Technology Agency, CREST, Chiyoda-ku, Tokyo 102-0075, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4796142

Reference20 articles.

1. Crystal Structure of Barium Disilicide at High Pressures

2. Electrical resistivity of metastable phases of BaSi2 synthesized under high pressure and high temperature

3. Isostructural BaSi2, BaGe2 and SrGe2: electronic and optical properties

4. Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

5. Optical Absorption Properties of BaSi2Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy

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