Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique-Reference-Cited by-同舟云学术

Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Published:2010-06-28 Issue:26 Volume:96 Page:262105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kimura Mutsumi,Kamiya Toshio,Nakanishi Takashi,Nomura Kenji,Hosono Hideo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3455072

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5. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

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