Achieving direct band gap in germanium through integration of Sn alloying and external strain
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4792649
Reference30 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
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3. Strained germanium thin film membrane on silicon substrate for optoelectronics
4. Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
5. A micromachining-based technology for enhancing germanium light emission via tensile strain
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