Stress measurements of radio‐frequency reactively sputtered RuO2 thin films-Reference-Cited by-同舟云学术

Stress measurements of radio‐frequency reactively sputtered RuO2 thin films

Published:1996-07-15 Issue:2 Volume:80 Page:822-826
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Hong Suk‐Kyoung¹,Kim Hyeong Joon¹,Yang Hong‐Geun²

Affiliation:

1. Department of Inorganic Materials Engineering, Seoul National University, Seoul 151‐742, Korea

2. OA Team, Semiconductor business, Samsung Electronics Co. Ltd., P.O. Box 37, Suwon 449‐900, Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference11 articles.

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2. K. R. Bellur, H. N. Al-Shareef, S. H. Rou, K. D. Gifford, O. Auciello, and A. I. Kingon, International Symposium on Applications of Ferroelectrics, Greenville, SC, August 1992.

3. L. Krusin-Elbaum, M. Wittmer, and D. S. Yee, Appl. Phys. Lett. 50, 1879 (1987).APPLAB0003-6951

4. A. Belkind, Z. Orban, J. L. Vossen, and J. A. Woollam, Thin Solid Films 207, 242 (1992).THSFAP0040-6090

5. M. L. Green, M. E. Gross, L. E. Papa, K. J. Schnoes, and D. Brasen, J. Electrochem. Soc. 132, 2677 (1985).JESOAN0013-4651

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