Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As-Reference-Cited by-同舟云学术

Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

Published:2008-11-03 Issue:18 Volume:93 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Kobayashi M.¹,Chen P. T.²,Sun Y.³,Goel N.⁴,Majhi P.⁵,Garner M.⁴,Tsai W.⁴,Pianetta P.¹³,Nishi Y.¹

Affiliation:

1. Stanford University 1 Department of Electrical Engineering, , 420 Via Pallou Mall, Stanford, California 94305, USA

2. Stanford University 2 Department of Materials Science and Engineering, , Stanford, California 94305, USA

3. Stanford Linear Accelerator Center 3 Stanford Synchrotron Radiation Laboratory, , Menlo Park, California 94305, USA

4. Intel Corporation 4 , Santa Clara, California 95052, USA

5. Intel Asiignee at SEMATECH 5 , 2706, Montopolis Drive, Austin, Texas 78741, USA

Abstract

The synchrotron radiation photoemission spectroscopic study was conducted to (a) investigate the surface chemistry of In0.53Ga0.47As and In0.52Al0.48As postchemical and thermal treatments, (b) construct band diagram, and (c) investigate the interface property of HfO2∕In0.53Ga0.47As and HfO2∕In0.52Al0.48As. Dilute HCl and HF etch remove native oxides on In0.53Ga0.47As and In0.52Al0.47As, whereas in situ vacuum annealing removes surface arsenic pileup. After the atomic layer deposition of HfO2, native oxides were considerably reduced compared to that in as-received epilayers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37±0.1 and 1.80±0.3eV for In0.53Ga0.47As and 3.00±0.1 and 1.47±0.3eV for In0.52Al0.47As, respectively.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3020298/13606223/182103_1_online.pdf

Reference18 articles.

1. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

2. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

3. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

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