Quantum oscillations and electronic features in V1− δ Sb2 single crystals

Author:

Tang F.12,Qu B.-C.1,Chen Y.12,Wang L.-R.3,Yin X.-Q.4,Han Z.-D.1ORCID,Liu Y.3,Zhang X.-M.3ORCID,Li B.5ORCID,Fang Y.1ORCID

Affiliation:

1. Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and information Engineering, Changshu Institute of Technology 1 , Changshu 215500, China

2. Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University 2 , Suzhou 215006, China

3. School of Materials Science and Engineering, Hebei University of Technology 3 , Tianjin 300130, China

4. School of Physics and Astronomy, Shanghai Jiao Tong University 4 , Shanghai 200240, China

5. Information Physics Research Center, Nanjing University of Posts and Telecommunications 5 , Nanjing 210023, China

Abstract

Nonsymmorphic compounds have attracted much interest owing to their potential nontrivial electronic states. Here, we grew V1−δSb2 single crystal with a nonsymmorphic space group I4/mcm and studied their de Haas–van Alphen oscillations. Orientation-dependent magnetization showed quantum oscillations, allowing determination of the three-dimensional Fermi surface and Berry phase. Our theoretical calculation implied that VSb2's band structures manifest flat bands along the Γ–X path, Dirac band crossings near the P and N points, and in the Γ–Z direction, and nontrivial surface states along the Γ¯–Z¯ line. However, the inconsistencies in observed and calculated quantum oscillation frequencies suggest that VSb2's band structures cannot nicely account for these electronic properties of our samples. This study reveals the profound impact of V vacancies on VSb2's electronic states, implying the possible topological quantum phase transition via defect engineering.

Funder

National Natural Science Foundation of China

Key University Science Research Project of Jiangsu Province

Publisher

AIP Publishing

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